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| MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features http://onsemi.com * * * * * * * Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves ("1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available 12 3 Symbol VCEO 40 100 VCB MJD31, MJD32 MJD31C, MJD32C Emitter-Base Voltage Collector Current - Continuous - Peak Base Current Total Power Dissipation @ TC = 25C Derate above 25C Total Power Dissipation @ TA = 25C Derate above 25C Operating and Storage Junction Temperature Range VEB IC IB PD PD TJ, Tstg 40 100 5 3 5 1 15 0.12 1.56 0.012 -65 to + 150 Vdc Adc Adc W W/C W W/C C Vdc 1 2 3 MJD31, MJD32 MJD31C, MJD32C Collector-Base Voltage Max Unit Vdc SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS MARKING DIAGRAMS 4 DPAK CASE 369C STYLE 1 YWW J3xxG MAXIMUM RATINGS Rating Collector-Emitter Voltage 4 DPAK-3 CASE 369D STYLE 1 YWW J3xxG Y WW xx G = Year = Work Week = 1, 1C, 2, or 2C = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Preferred devices are recommended choices for future use and best overall value. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Lead Temperature for Soldering Purposes Symbol RqJC RqJA TL Max 8.3 80 260 Unit C/W C/W C *These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2005 1 June, 2005 - Rev. 6 Publication Order Number: MJD31/D IIII I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I I III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) Base-Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Characteristic MJD31, MJD32 MJD31C, MJD32C MJD31, MJD32 MJD31C, MJD32C http://onsemi.com VCEO(sus) Symbol VCE(sat) VBE(on) ICES ICEO IEBO hFE hfe fT Min 40 100 20 25 10 3 - - - - - Max 1.8 1.2 20 50 - 50 - - 1 - - mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc - - 2 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) TYPICAL CHARACTERISTICS TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 25 ms +11 V 0 1.5 15 TA (SURFACE MOUNT) TC -9 V tr, tf 10 ns DUTY CYCLE = 1% 51 -4 V D1 RB VCC +30 V RC SCOPE 2 20 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) 125 150 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating Figure 2. Switching Time Test Circuit 500 300 hFE , DC CURRENT GAIN TJ = 150C 25C t, TIME ( s) -55 C VCE = 2 V 2 1 0.7 0.5 0.3 tr @ VCC = 30 V IC/IB = 10 TJ = 25C 100 70 50 30 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 td @ VBE(off) = 2 V 10 7 5 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1 3 0.05 0.07 0.1 0.3 0.5 0.7 1 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain Figure 4. Turn-On Time 1.4 1.2 V, VOLTAGE (VOLTS) 1 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2 V 0.4 0.2 VCE(sat) @ IC/IB = 10 t, TIME ( s) TJ = 25C 3 2 ts 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 0.3 0.5 1 23 0.03 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 tf @ VCC = 10 V tf @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C 0 0.003 0.005 0.01 0.02 0.03 0.05 1 2 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. "On" Voltages Figure 6. Turn-Off Time http://onsemi.com 3 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 TJ = 25C 1.6 IC = 0.3 A 1A 3A CAPACITANCE (pF) 200 300 TJ = +25C 1.2 100 Ceb 70 50 Ccb 0.8 0.4 0 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) 200 500 1000 30 0.1 0.2 0.3 0.5 1 23 5 10 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 7. Collector Saturation Region Figure 8. Capacitance r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RqJC(t) = r(t) RqJC RqJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 9. Thermal Response 10 IC, COLLECTOR CURRENT (AMPS) 5 3 2 1 0.5 0.3 0.2 0.1 dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO TC = 25C SINGLE PULSE TJ = 150C MJD31, MJD32 MJD31C, MJD32C 3 5 7 10 20 30 50 70 100 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 ms 500 ms 1 ms 0.05 0.03 0.02 0.01 1.5 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) v 150_C. T J(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 10. Active Region Safe Operating Area http://onsemi.com 4 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ORDERING INFORMATION Device MJD31C MJD31CG MJD31C1 MJD31C1G MJD31CRL MJD31CRLG MJD31CT4 MJD31CT4G MJD31T4 MJD31T4G MJD32C MJD32CG MJD32C1 MJD32C1G MJD32CRL MJD32CRLG MJD32CT4 MJD32CT4G MJD32RL MJD32RLG MJD32T4 MJD32T4G Package Type DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) DPAK DPAK (Pb-Free) Package 369C 369C 369D 369D 369C 369C 369C 369C 369C 369C 369C 369C 369D 369D 369C 369C 369C 369C 369C 369C 369C 369C Shipping 75 Units / Rail 75 Units / Rail 75 Units / Rail 75 Units / Rail 1800 Tape & Reel 1800 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 75 Units / Rail 75 Units / Rail 75 Units / Rail 75 Units / Rail 1800 Tape & Reel 1800 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel 1800 Tape & Reel 1800 Tape & Reel 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- -T- B V R 4 SEATING PLANE C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 6 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR http://onsemi.com 7 MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 MJD31/D |
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